摘要：近日，南京邮电大学唐为华教授、内蒙古大学刘增教授和南京理工大学张章博士等人在Science China Materials发表论文，采用简单的等离子体增强化学气相沉积技术，制备了一系列锡元素掺杂的氧化镓薄膜（Sn:Ga=0–1.14 at.%）。

半导体的魅力之一在于器件性能可通过可调控的元素掺杂来进行优化。相较于重掺杂，轻掺杂效率更高且足以实现精细的材料特性调控与能带结构剪裁。

近日，南京邮电大学唐为华教授、内蒙古大学刘增教授和南京理工大学张章博士等人在Science China Materials发表论文，采用简单的等离子体增强化学气相沉积技术，制备了一系列锡元素掺杂的氧化镓薄膜（Sn:Ga=0–1.14 at.%）。

本文要点

1) 随着氧空位（OⅡ）浓度的变化，薄膜电导率与非典型的Ti/Sn-Ga2O3界面肖特基结行为均可调节，二者协同影响着Au/Ti/Sn-Ga2O3/Ti/Au光电探测器内的载流子传输过程及相应的探测性能。

2) 当OⅡ浓度升至38.88%时，界面肖特基势垒高度降至0.54 eV，这有利于电子隧穿，使器件响应度达到1880 mA/W的优异水平。

3) 反之当OⅡ浓度降低至30%时，势垒高度增至0.70 eV，可有效抑制暗电流（28.4 pA），同时提升器件比探测率（1.44×1013 Jones）与光暗电流比（3.42×104）。

这项研究强调了平衡掺杂浓度与性能优化的重要性，揭示了界面工程对半导体器件电子传输行为及性能调控的重要潜力。

Figure 1. (a) Schematic diagram of the PECVD system. (b) Structure diagram and (c) top-view microscopy image of the fabricated Sn-doped Ga2O3 film-based PD.

Figure 2. O 1s high-resolution XPS spectra of (a) S0, (b) S1, (c) S3, and (d) S5 samples. The log-scale (1) and linear (2) I-V characteristics of the corresponding (e) S0, (f) S1, (g) S3, and (h) S5 devices under dark conditions and light illumination.

Figure 3. (a) Current and (b) conductance comparison of S0–S5 devices under dark conditions and light illumination. (c) EQE, R, D*, and PDCR comparison of S0–S5 devices. (d) I-tcurves of S0–S5 devices.

Figure 4. (a) Schematic diagram of energy band structural evolution of S0–S5 samples before contacting with the Ti electrode. (b) Strategy of donor doping to improve conductivity. Operating mechanism of the S3 and S5 devices (c, d) under the dark condition, and (e, f) under UV light illumination with bias after contacting with Ti electrodes.

【作者简介】

Lili Yang (杨莉莉) received her BE degree from Nanjing Tech University, Nanjing, China, and PhD degree from Shanghai Institute of Ceramics, Chinese Academy of Sciences (SIC, CAS), Shanghai, China, and was jointly educated at The City College of New York (CCNY), New York, USA. Currently, she is a lecturer at the College of Integrated Circuit Science and engineering, Nanjing University of Posts and Telecommunications (NJUPT), Nanjing, China.

Zeng Liu (刘增) is currently a professor at Inner Mongolia University, Hohhot, China. He obtained his PhD degree (2021) from Beijing University of Posts and Telecommunications, China, MS degree (2016) from Dalian University of Technology, China, and BS degree (2013) from Liaoning Normal University, Dalian, China. From July 2021 to July 2024, he served as a special-term associate professor at NJUPT, China. His research interests are wide bandgap semiconductor ultraviolet optoelectronics and physics.

Zhang Zhang (张章) was born in Anhui province, China. He received his BE degree in materials science and engineering in 2015 from Central South University (CSU). In 2021, he received his PhD degree from SICCAS, Shanghai, China. His research interests include the piezoelectric properties of semiconductor piezoelectric films (AlN, ε-Ga2O3, etc.) and the relaxation of ferroelectric single crystals, and their applications in acoustic devices.

Weihua Tang (唐为华) was born in Yancheng, Jiangsu, China. He received his PhD degree from the Institute of Physics (IOP), CAS, Beijing. He was selected for the Hundred-Talent Program of CAS in 2001, a National Candidate of “New Century Talent Project” in 2006, and enjoyed a special government allowance in 2014. He is currently a full professor at NJUPT, Nanjing, China. His current research interests include Ga2O3 photodetectors and power devices.

Lili Yang, Shan Li, Muzi Li, Maolin Zhang, Zeng Liu, Zhang Zhang, Weihua Tang. Sn doping induced interfacial barrier height tailoring in GaO deep-ultraviolet photodetector. Sci. China Mater. (2025).

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来源：宽禁带联盟