摘要：Silicon Carbide (SiC) technology has revolutionized power electronics with its superior efficiency, thermal performance, and compa
Technical Introduction of BASiC Semiconductor’s SiC Power Modules for 125kW and 135kW Industrial & Commercial Energy Storage PCS
1. Introduction
Silicon Carbide (SiC) technology has revolutionized power electronics with its superior efficiency, thermal performance, and compact design. BASiC Semiconductor, leveraging 12 years of expertise in energy storage innovation, introduces its cutting-edge 125kW and 135kW Industrial and Commercial Energy Storage Power Conversion Systems (PCS). These systems integrate advanced SiC MOSFET modules, offering unprecedented efficiency and reliability for modern energy storage applications.
2. Product Overview
The BMF240R12E2G3 SiC MOSFET module, a core component of BASiC’s PCS solutions, features:
Topology: Half-bridge three-phase four-leg configuration.
Voltage/Current Rating: 1200V/240A.
Package: Pcore™2 E2B, optimized for high power density and thermal management.
Key Specifications:
Low on-resistance (RDS(on)): 5.5 mΩ (typ).
Junction temperature tolerance: Up to 175°C.
Integrated SiC Schottky Barrier Diode (SBD) for reduced reverse recovery losses.
3. Technological Advantages
3.1 Enhanced Efficiency and Thermal Performance
Negative Temperature Coefficient for Eon: Unlike conventional SiC MOSFETs, BASiC’s module exhibits a unique negative temperature characteristic in turn-on loss (Eon). As temperature rises from 25°C to 125°C, Eon decreases by ~15%, offsetting conduction losses and maintaining high efficiency under heavy loads (Fig. 25).
Si₃N₄ Ceramic Substrate: Provides superior thermal conductivity (90 W/mK) and bending strength (700 N/mm²), ensuring reliability through 1,000 thermal shock cycles (vs. Al₂O₃/AlN delamination after 10 cycles).
3.2 System-Level Benefits
Size Reduction: SiC modules reduce PCS dimensions by 12.8% (780mm → 680mm) compared to IGBT-based systems.
Efficiency Gains: Average efficiency increases by 1%, with power density reaching 25% higher than traditional solutions.
Cost Savings: Enables 5% lower initial system costs and 2–4 months faster ROI for 1MW/2MWh energy storage deployments.
4. Performance Benchmarking
4.1 Static Parameters
BASiC’s SiC MOSFET outperforms international competitors in critical metrics (Fig. 26–29):
Breakdown Voltage (BVDSS): 1650V at 150°C (vs. 1472V for CAB006M12GM3).
Threshold Voltage (VGS(th)): Stable 3.4–4.3V across temperatures, ensuring robust noise immunity.
Body Diode Forward Voltage (VSD): 1.35V (vs. 4.8–5.4V for competitors), reducing conduction losses during grid surges.
4.2 Dynamic Parameters
Switching Loss (Etotal): At 800V/400A and 125°C, BASiC achieves 20.82 mJ total loss, 23% lower than CAB006M12GM3 (27.21 mJ).
Reverse Recovery (Qrr): 0.74 μC at 125°C (vs. 2.69 μC for competitors), minimizing EMI and stress on DC bus capacitors.
5. Application Solutions
5.1 Industrial & Commercial Energy Storage
All-in-One Cabinets: BASiC’s 125kW PCS enables scalable systems (e.g., 8 cabinets for 1MW/2MWh), reducing footprint and balance-of-system costs.
Grid Surge Resilience: Embedded SBD technology ensures stable operation during voltage fluctuations, critical for grid-tied storage systems.
5.2 Supporting Components
BASiC offers a comprehensive driver solution for seamless integration:
Isolated Gate Driver (BTD5350MCWR): 10A peak current, Miller clamping, and soft shutdown.
DC/DC Converter (BTP1521F): 6W output, programmable up to 1.3MHz.
Transformer (TR-P15DS23-EE13): 4W dual-channel isolation for reliable power delivery.
6. Conclusion
BASiC Semiconductor’s SiC MOSFET modules redefine performance benchmarks for industrial and commercial energy storage PCS. With unmatched efficiency, thermal resilience, and system-level cost savings, the BMF240R12E2G3 and associated solutions empower next-generation energy infrastructure.
Join the SiC revolution—contact BASiC Semiconductor to elevate your energy storage systems.
BASiC Semiconductor
Innovating Power, Empowering Sustainability
Data sourced from simulation and lab tests. Actual performance may vary based on application conditions.
来源：杨茜碳化硅半导体