摘要：郭浩中，台湾阳明交通大学教授，鸿海研究院半导体研究中心主任，IEEE Fellow、SPIE Fellow、OSA Fellow、IET Fellow。目前的研究兴趣包括半导体激光器、垂直腔面发射激光器、蓝光和紫外光LED激光器、量子受限光电子结构、光电子材料

2025年11月11-14日，第十一届国际第三代半导体论坛&第二十二届中国国际半导体照明论坛（IFWS&SSLCHINA 2025）将在厦门召开。

嘉宾简介

郭浩中，台湾阳明交通大学教授，鸿海研究院半导体研究中心主任，IEEE Fellow、SPIE Fellow、OSA Fellow、IET Fellow。目前的研究兴趣包括半导体激光器、垂直腔面发射激光器、蓝光和紫外光LED激光器、量子受限光电子结构、光电子材料和太阳能电池。他在ACS Nano、ACS Nano Letter、Advanced Materials、Optics Express、Applied Physics Letters等著名国际期刊上撰写或合著了500多篇期刊论文。

Hao-Chung Kuo, professor from National Yang Ming Chiao Tung University, director for Semiconductor Research Center, Hon Hai Research Institute. His current research interests include semiconductor lasers, vertical-cavity surface-emitting lasers, blue and UV LED lasers, quantum-confined optoelectronic structures, optoelectronic materials, and solar cell. He has authored or coauthored more than 500 journal papers in renowned international journals such as ACS Nano, ACS Nano Letter, Advanced Materials, Optics Express, Applied Physics Letters.

Prof. Kuo’s service to the III-V community is multifaceted. He was elected as the Chairman of IEEE/Photonics Taipei Chapter (since 2012). In addition, he was in the Technical Program Committee for several major technical conferences for the IEEE, the OSA, and the SPIE, which include IEEE/OSA CLEO (2009 – Present), SPIE Photonics West (2009 – Present), and others. He serves as a Panel Member for Taiwan National Science Council (Photonic Program- especially in semiconductor lasers and LEDs). He was the Guest Editor of the IEEE JSTQE (2009) and was an Associate Editor of the OSA/IEEE Journal of lightwave technology (2008-2013) and Associate Editor of the OSA Photonics Research (2019-now). He was the recipient of The Optical Engineering Society of Taiwan (SPIE Taipei Chapter) – Young Researcher Award in 2007. NSC of Taiwan- Dr. Ta-You Wu Award in 2007. Faculty Research Award of NCTU in 2010, 2011. Micro-optics Conference (MOC) Contribution Award-10th MOC Program-committee Chairman (2011). He was recognized by the Photonics community and received OSA(2011), IET (2011), SPIE (2012) IEEE (2015) Fellow.

报告介绍

GaN基UVC和Micro LED技术最新进展

Recent Progress of GaN-based Technology for UVC and Micro-LED

基于AlGaN的深紫外发光二极管（DUV LED）因其高光子能量、环保性和长寿命而在消毒、医疗和生化检测应用中引起了极大的关注。然而，它们的性能仍然受到低光提取效率（LEE）和高器件热负荷的限制，这源于侧壁缺陷、p-GaN吸收和较差的光耦合，这些缺陷固有地限制了UVC状态下的外部量子效率（EQE）。为了解决这些问题，进行了一系列优化研究。减薄p-GaN层有效地降低了内部吸收，而集成钝化的纳米孔阵列抑制了侧壁非辐射复合并提高了反射率，在不降低热阻的情况下，与传统器件相比，EQE峰值提高了13.3%（~13.9 K/W）。

在微发光二极管（μLED）领域，作为下一代显示器和高速可见光通信的关键部件，低电流密度下的发光效率和光谱稳定性至关重要。在背光系统中，将展示一种使用半极性蓝色μLED与CsPbBr组合的RGB偏振发射器件 纳米棒与CsPbI₃–Cs₄PbI₆ 混合纳米晶体薄膜，RGB的偏振度为0.26/0.48/0.38，通过偏振器的透光率提高了73.6%。此外，在绿色μLED中采用了预应变层结构来减轻量子限制的斯塔克效应，提高了发光效率和通信带宽，使单个器件能够充当双向数据速率高达1.1的光收发器 Gbps.这些进展说明了GaN基DUV LED在消毒和传感方面的巨大潜力，以及μLED在先进的全色微型显示器和高速光通信方面的巨大潜能。

Owing to their high photon energy, environment-friendly nature, and long lifetime, deep-ultraviolet light-emitting diodes (DUV-LEDs) based on AlGaN have attracted great attention for sterilization, medical treatment, and biochemical detection applications. However, their performance is still limited by low light extraction efficiency (LEE) and high device thermal load, originating from sidewall defects, p-GaN absorption, and poor optical coupling that inherently restrict external quantum efficiency (EQE) in the UVC regime. To address these issues, we conducted a series of optimization studies. Thinning the p-GaN layer effectively reduced internal absorption, while integrating passivated nano-hole arrays suppressed sidewall non-radiative recombination and enhanced reflectivity, yielding a peak EQE improvement of 13.3% over conventional devices without degrading thermal resistance (~13.9 K/W). Controlled chemical roughening of n-AlGaN surfaces after laser lift-off reduced total internal reflection and improved both LEE and thermal dissipation, achieving up to 8.6% EQE enhancement and lowering junction temperature by ~4.7 °C under 200 A/cm². Advanced multifocal laser stealth dicing (MFLSD) generated roughened sidewalls without V-groove damage, reducing forward voltage, increasing photon escape probability, and boosting EQE by ~1–2% compared to standard dicing, while also mitigating wavelength redshift at high currents. Additional approaches, such as tailoring chip sidewall geometries, connecting two emitters in series for high-voltage, low-current operation, and incorporating reflective passivation layers (RPL), further improved light output and thermal stability.

In the field of micro-light-emitting diodes (μLEDs), regarded as key components for next-generation displays and high-speed visible light communication, luminous efficiency and spectral stability at low current density are decisive. In backlighting systems, we demonstrated an RGB polarized-emission device using semipolar blue μLEDs combined with CsPbBr₃ nanorod and CsPbI₃–Cs₄PbI₆ hybrid nanocrystal films, achieving polarization degrees of 0.26/0.48/0.38 for RGB and enhancing light transmission through polarizers by 73.6%. In addition, a pre-strained layer structure in green μLEDs was employed to mitigate the quantum-confined Stark effect, improving both luminous efficiency and communication bandwidth, enabling single devices to act as optical transceivers with bidirectional data rates up to 1.1 Gbps. These advances illustrate the significant potential of GaN-based DUV-LEDs for sterilization and sensing, and μLEDs for advanced full-color microdisplays and high-speed optical communication.

来源：芯世界