清华大学 | 块状 β-Ga₂O₃ 半导体单晶体的生长过程、缺陷和掺杂物
由清华大学的研究团队在学术期刊China Foundry发布了一篇名为Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals(块状 β-Ga2O3 半
由清华大学的研究团队在学术期刊China Foundry发布了一篇名为Growth process, defects, and dopants of bulk β-Ga2O3 semiconductor single crystals(块状 β-Ga2O3 半